intellimod? module single phase igbt inverter output 800 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 pm800dv1b060 09/12 rev. 0 description: powerex intellimod? intelligent power modules are isolated base modules designed for power switching applications operating at frequencies to 20khz. built-in control circuits provide optimum gate drive and protection for the igbt and free-wheel diode power devices. features: complete output power circuit gate drive circuit protection logic C short circuit C over temperature C under voltage applications: inverters ups motion/servo control power supplies ordering information: example: select the complete part number from the table below -i.e. pm800dv1b060 is a 600v, 800 ampere intellimod? intelligent power module. type current rating v ces amperes volts (x 10) pm 800 60 outline drawing and circuit diagram dimensions inches millimeters a 4.72 120.0 b 3.54 90.0 c 4.170.010 106.00.25 d 2.87 73.0 e 2.990.010 76.00.25 f 0.26 rad. 6.5 rad. g 0.26 dia. 6.5 dia. h m8 metric m8 j 1.10 28.0 k 1.22 31.0 l 0.120.02 3.00.5 m 0.71 18.0 dimensions inches millimeters n 0.14 dia. 3.5 dia. p 1.34+0.04/-0.02 34.0+1.0/-0.5 q 1.29 32.8 r 1.22 31.0 s 0.16 4.0 t 0.025 sq. 0.64 sq. u 1.79 45.5 v 1.34 34.0 w 1.52 38.5 x 1.73 44.0 y 0.10 2.54 z 0.40 10.16 amp v cc v p1 c p1 f po v pc f o in c1 gnd tjk tja out sink sc c2e1 fwdi igbt nc amp v cc v n1 c n1 f no v nc f o in gnd tjk tja out sink sc e2 fwdi igbt nc h (3 typ) c2e1 e2 terminal code 5 : fno 4 : vnc n 3 : cn1 2 : nc 1 : vn1 5 : fpo 4 : vpc p 3 : cp1 2 : nc 1 : vp1 c1 1 4 5 2 3 1 4 5 2 3 n p a b c d e w l k q p n j j v x r s f (4 places) g (4 places) t sq pin (10 pls) u y y y y y y y y m m m z
pm800dv1b060 intellimod? module single phase igbt inverter output 800 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 09/12 rev. 0 absolute maximum ratings, t j = 25c unless otherwise specified characteristics symbol pm800dv1b060 units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m6 mounting screws (typical) m s 43 in-lb mounting torque, m8 main terminal screws (typical) m t 87 in-lb module weight (typical) m 720 grams supply voltage protected by sc (v d = 13.5 ~16.5v, inverter part, t j = 125c start) v cc(prot) 400 volts surge supply voltage (applied between c1-e2, surge value) v cc(surge) 500 volts isolation voltage, (60hz, sinusoidal, charged part to base, ac 1 minute) v rms 2500 volts inverter sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 600 volts collector current (t c = 25c) i c 800 amperes peak collector current (pulse) i crm 1600 amperes emitter current (t c = 25c) i e 800 amperes peak emitter current (pulse) i erm 1600 amperes total power dissipation (t c = 25c) * 1 p tot 2500 watts control sector supply voltage (applied between v p1 -v pc , v n1 -v nc ) v d 20 volts input voltage (applied between c p1 -v pc , v n1 -v nc ) v cin 20 volts fault output supply voltage (applied between f po -v pc , f no -v nc ) v fo 20 volts fault output current (sink current at f po , f no terminals) i fo 20 ma *1 case temperature (t c ) measured point is just under the chips.
pm800dv1b060 intellimod? module single phase igbt inverter output 800 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 09/12 rev. 0 electrical and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units igbt inverter sector collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 800a, 1.85 2.35 volts pulsed, t j = 25c v d = 15v, v cin = 0v, i c = 800a, 1.85 2.35 volts pulsed, t j = 125c emitter-collector voltage v ec i e = 800a, v d = 15v, v cin = 15v 1.7 2.8 volts switching times t on v d = 15v, v cin = 0 ~ 15v, 0.3 0.8 2.0 s t rr v cc = 300v, i c = 800a, 0.25 0.8 s t c(on) t j = 125c, 0.4 1.0 s t off inductive load 1.4 2.3 s t c(off) (per 1 arm) 0.3 1.0 s collector-emitter cutoff current i ces v ce = v ces , v d = 15v, 1.0 ma v cin = 15, t j = 25c v ce = v ces , v d = 15v, 10.0 ma v cin = 15, t j = 125c control sector circuit current i d v d = 15v, v cin = 15v, v p1 -v pc 2 4 ma v d = 15v, v cin = 15v, v n1 -v nc 2 4 ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) c p1 -v pc , c n1 -v nc 1.7 2.0 2.3 volts short circuit trip level sc -20c t j 125c, v d = 15v 1200 amperes short circuit current delay time t off(sc) v d = 15v 0.2 s over temperature protection ot trip level 135 c (detect temperature of chip) ot (hys) reset level 20 c supply circuit under voltage protection uv t trip level 11.5 12.0 12.5 volts (-20c t j 125c) uv r reset level 12.5 volts fault output current i fo(h) v d = 15v, v fo = 15v * 2 0.01 ma i fo(l) v d = 15v, v fo = 15v * 2 10 15 ma fault output pulse width t fo v d = 15v * 2 1.0 1.8 ms *2 fault output is given only when the internal sc, ot and uv protection. fault output of sc, ot and uv protection operate by lower arms. fault output of sc protecton given pulse. fault output of ot, uv protection given pulse while over trip level.
pm800dv1b060 intellimod? module single phase igbt inverter output 800 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 09/12 rev. 0 thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q inverter igbt (per 1 element) * 1 0.05 k/watt r th(j-c)d inverter fwdi (per 1 element) * 1 0.09 k/watt contact thermal resistance r th(c-s) case to heatsink (per 1 module), 0.014 k/watt thermal grease applied * 1 recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across c1-e2 terminals 400 volts control supply voltage v d applied between v p1 -v pc , v n1 -v nc * 3 15 1.5 volts input on voltage v cin(on) applied between 0.8 volts input off voltage v cin(off) c p1 -v pc , c n1 -v nc 4.0 volts pwm input frequency f pwm using application circuit 20 khz arm shoot-through blocking time t dead for ipms each input signal 3.0 s *1 case temperature (t c ) measured point is just under the chips. *3 with ripple satisfying the following conditions: dv/dt swing 5v/ s, variation 2v peak to peak.
pm800dv1b060 intellimod? module single phase igbt inverter output 800 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 5 09/12 rev. 0 collector current, i c , (amperes) collector-emitter voltage, v ce(sat) , (volts) saturation voltage characteristics (typical) 0 100 200 300 800 600 700 400 500 1.0 1.5 0.5 0 v d = 15v 2.0 2.5 control supply voltage, v d , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturaton voltage characteristics (typical) 12 14 13 15 17 16 18 1.5 1.0 2.0 2.5 i c = 800a t j = 25c t j = 125c collector-emitter voltage, v ce(sat) , (volts) collector current, i c , (amperes) output characteristics (typical) 0 1.0 1.5 2.0 100 0 v d = 17v 13 t j = 25 c 200 800 600 700 400 500 300 0 0.5 1.0 1.5 2.0 100 0 200 800 600 700 500 400 300 15 collector current, i c , (amperes) switching times, t on , t off , ( s) switching time vs. collector current characteristics (typical) 10 1 10 1 10 2 10 3 10 0 10 -1 t on v cc = 300v v d = 15v inductive load t off t j = 25c t j = 125c collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( s) switching time vs. collector current characteristics (typical) 10 0 10 1 10 2 10 3 10 -1 10 -2 t c(on) t c(off) collector current, i c , (amperes) switching energy, e on , e off , (mj/pulse) switching loss collector current characteristics (typical) 40 35 20 25 30 0 600 200 400 1000 800 5 15 10 0 e off e on v cc = 300v v d = 15v t j = 25c t j = 125c emitter current, i e , (amperes) reverse recovery time, t rr , (s) reverse recovery characteristics (typical) 0.5 0 600 800 400 200 1000 emitter current, i e , (amperes) 0 600 800 400 200 1000 0.1 0 i rr t rr 100 0 reverse recovery current, i r r , (amperes) 0.2 200 0.3 300 0.4 25 5 0 10 15 20 400 500 emitter-collector voltage, v ec , (volts) collector recovery current, -i c , (amperes) diode forward characteristics (typical) t j = 25c t j = 125c v d = 15v t j = 25c t j = 125c v cc = 300v v d = 15v inductive load t j = 25c t j = 125c v cc = 300v v d = 15v inductive load t j = 25c t j = 125c v cc = 300v v d = 15v inductive load t j = 25c t j = 125c switching loss, e rr , (mj/pulse) switching reverse recovery loss characteristics (typical)
pm800dv1b060 intellimod? module single phase igbt inverter output 800 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 6 09/12 rev. 0 junction temperature, t j , (c) short circuit current trip level, (t j = 25c) = 1.0 short circuit trip level vs. junction temperature (typical) 0 -50 100 50 150 0.4 0 1.2 1.6 0.8 2.0 0 -50 100 50 150 4 0 12 16 8 20 5 0 15 20 10 25 10 0 30 40 20 80 70 50 60 v d = 15v junction temperature, t j , (c) supply circuit under voltage protection trip reset level, uv t , uv r , (volts) control supply voltage trip-reset level temperature dependancy (typical) v d = 15v uv t uv r frequency current, f c , (khz) time, (s) time, (s) circuit current vs. frequency current (typical) v d = 15v t j = 25c t j = 125c normalized transient thermal impedance, z t h ( j-c) z th = r th ? (normalized value) normalized transient thermal impedance, z t h ( j-c) z th = r th ? (normalized value) transient thermal impedance characteristics (igbt) transient thermal impedance characteristics (fwdi) 10 0 10 -3 10 -2 10 -1 10 0 10 1 10 -5 10 -4 10 -3 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 -3 10 -2 10 -1 10 0 10 1 10 -5 10 -4 10 -3 single pulse t c = 25c per unit base = r th(j-c) = 0.09 k/w single pulse t c = 25c per unit base = r th(j-c) = 0.05 k/w circuit current, i d , (ma)
|
